Semiconductor package with multiple coplanar interposers

ABSTRACT

A semiconductor package includes a first interposer, a second interposer, and a gap between the first interposer and the second interposer. The first interposer and the second interposer are coplanar. A first die is mounted on the first interposer and the second interposer. The first die includes first connection elements connecting the first die to the first interposer or the second interposer. A redistribution layer (RDL) structure is disposed on bottom surfaces of the first and second interposers for connecting the first interposer with the second interposer. The RDL structure includes at least one bridge trace traversing the gap to electrically connect the first interposer with the second interposer.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a continuation of U.S. patent application Ser. No.15/098,341, filed Apr. 14, 2016, pending, the disclosure of which ishereby incorporated herein in its entirety by this reference.

TECHNICAL FIELD 1. Field of the Invention

The present invention relates to semiconductor packaging. Moreparticularly, the present invention relates to a semiconductor packagewith multiple coplanar interposers.

BACKGROUND 2. Description of the Prior Art

Integrated circuit (IC) chips are typically assembled into packages thatare soldered to a printed circuit board (PCB). Each integrated circuitchip may be connected to a substrate of the package with a number ofsolder bumps in a process commonly referred to as controlled collapsedchip connection (C4).

As known in the art, an interposer substrate such as a siliconinterposer with through silicon vias (TSVs) is usually used insemiconductor packaging to “fan out” the contacts of the integratedcircuit chips. As more chips are assembled in one package, the size andthe surface area of the interposer substrate are also increased.

For example, for mounting a processor chip such as a Graphics ProcessingUnit (GPU) and several memory chips such as Graphics Double Data Rate(GDDR) chips or High-Bandwidth Memory (HBM) chips, a large-sizeinterposer substrate having a surface area of up to 33 mm×28 mm istypically required.

However, the size of silicon interposers from the leading foundries iscurrently limited to 26 mm×32 mm. To fabricate the large-size siliconinterposers, yields can decrease thereby increasing the cost ofproducing the semiconductor packages.

Further, large-size interposer substrates are prone to significantwarpage when used as part of a semiconductor package, particularlyduring the reflow process. Warpage of the interposer substrate duringfabrication of a semiconductor package can reduce yield and result inpoor package reliability, both of which are highly undesirable.

BRIEF SUMMARY

It is one object of the invention to provide an improved semiconductorpackage with multiple coplanar interposers with smaller sizes in orderto solve the above-mentioned prior art shortcomings or problems.

In one aspect of the invention, a semiconductor package includes a firstinterposer, a second interposer, and a gap between the first interposerand the second interposer. The first interposer and the secondinterposer are coplanar. A first die is mounted on the first interposerand the second interposer. The first die includes first connectionelements connecting the first die to either the first interposer or thesecond interposer. A redistribution layer (RDL) structure is disposed onbottom surfaces of the first and second interposers for connecting thefirst interposer with the second interposer. The RDL structure includesat least one bridge trace traversing the gap to electrically connect thefirst interposer with the second interposer.

According to one embodiment, a second die is mounted on the firstinterposer and the second interposer. The first die and the second dieare coplanar. The second die comprises a plurality of second connectionelements connecting the second die to the first interposer or the secondinterposer. The first connection elements and the second connectionelements may be solder bumps or metal bumps.

According to one embodiment, the semiconductor package further includesa first molding compound surrounding the first die and the second die,and a second molding compound encapsulating the first connectionelements, the second connection elements, the first interposer, and thesecond interposer. The first molding compound and the second moldingcompound may have different compositions. The gap is filled up with thesecond molding compound.

These and other objectives of the present invention will no doubt becomeobvious to those of ordinary skill in the art after reading thefollowing detailed description of the preferred embodiment that isillustrated in the various drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings are included to provide a furtherunderstanding of the embodiments, and are incorporated in and constitutea part of this specification. The drawings illustrate some of theembodiments and, together with the description, serve to explain theirprinciples. In the drawings:

FIG. 1 is a block diagram illustrating a topographic view of asemiconductor package having two interposers in accordance with oneembodiment of the invention;

FIG. 2 is a schematic, cross-sectional diagram of the semiconductorpackage having two interposers taken along line I-I′ of FIG. 1;

FIG. 3 is a schematic, cross-sectional diagram of the semiconductorpackage having two interposers taken along line II-II′ of FIG. 1;

FIG. 4 to FIG. 10 are schematic, cross-sectional diagrams showing anexemplary method for fabricating the semiconductor package having twointerposers of FIG. 1;

FIG. 11 is a block diagram illustrating a topographic view of asemiconductor package having three interposers in accordance withanother embodiment of the invention;

FIG. 12 is a schematic, cross-sectional diagram of the semiconductorpackage having three interposers taken along line of FIG. 11;

FIG. 13 is a schematic, cross-sectional diagram of the semiconductorpackage having three interposers taken along line IV-IV′ of FIG. 11;

FIG. 14 is a block diagram illustrating a topographic view of asemiconductor package having two interposers in accordance with anotherembodiment of the invention;

FIG. 15 is a schematic, cross-sectional diagram of the semiconductorpackage having two interposers taken along line V-V′ of FIG. 14;

FIG. 16 is a schematic, cross-sectional diagram of the semiconductorpackage having two interposers taken along line VI-VI′ of FIG. 14;

FIG. 17 is a block diagram illustrating a topographic view of asemiconductor package having four interposers in accordance with anotherembodiment of the invention;

FIG. 18 is a schematic, cross-sectional diagram of the semiconductorpackage having four interposers taken along line VII-VII′ of FIG. 17;and

FIG. 19 is a schematic, cross-sectional diagram of the semiconductorpackage having four interposers taken along line VIII-VIII′ of FIG. 17.

It should be noted that all the figures are diagrammatic. Relativedimensions and proportions of parts of the drawings have been shownexaggerated or reduced in size, for the sake of clarity and conveniencein the drawings. The same reference numerals are generally used to referto corresponding or similar features in modified and differentembodiments.

DETAILED DESCRIPTION

In the following detailed description of the invention, reference ismade to the accompanying drawings, which form a part hereof, and inwhich is shown by way of illustration, specific embodiments in which theinvention may be practiced. These embodiments are described insufficient detail to enable those skilled in the art to practice theinvention. Other embodiments may be utilized and structural changes maybe made without departing from the scope of the present invention.

The following detailed description is, therefore, not to be taken in alimiting sense, and the scope of the present invention is defined onlyby the appended claims, along with the full scope of equivalents towhich such claims are entitled.

One or more implementations of the present invention will now bedescribed with reference to the accompanying drawings, wherein likereference numerals are used to refer to like elements throughout, andwherein the illustrated structures are not necessarily drawn to scale.The terms “die,” “chip,” “semiconductor chip,” and “semiconductor die”may be used interchangeably throughout the specification.

The terms “wafer” and “substrate,” as used herein, include any structurehaving an exposed surface onto which a layer is deposited according tothe present invention, for example, to form the circuit structure suchas a redistribution layer (RDL). The term “substrate” is understood toinclude semiconductor wafers, but is not limited thereto. The term“substrate” is also used to refer to semiconductor structures duringprocessing, and may include other layers that have been fabricatedthereupon.

Please refer to FIG. 1 to FIG. 3. FIG. 1 is a block diagram illustratinga topographic view of a semiconductor package having two interposers inaccordance with one embodiment of the invention. FIG. 2 is a schematic,cross-sectional diagram of the semiconductor package having twointerposers taken along line I-I′ of FIG. 1. FIG. 3 is a schematic,cross-sectional diagram of the semiconductor package having twointerposers taken along line II-IP of FIG. 1.

As shown in FIG. 1 to FIG. 3, a semiconductor package 1 comprises twodiscrete interposers: a first interposer 21 and a second interposer 22.The first interposer 21 and the second interposer 22 may be arranged ina side-by-side manner. According to the embodiment, the first interposer21 and the second interposer 22 are arranged in parallel along thereference y-axis. The first interposer 21 has a top surface 21 a (orchip-mounting surface) and a bottom surface 21 b that is opposite to thetop surface 21 a. The second interposer 22 has a top surface 22 a (orchip-mounting surface) and a bottom surface 22 b that is opposite to thetop surface 22 a. According to the embodiment, the first interposer 21and the second interposer 22 are coplanar. That is, the top surface 21 ais substantially flush with the top surface 22 a.

The first interposer 21 and the second interposer 22 may have the samesize. It is understood that the first interposer 21 and the secondinterposer 22 may have different sizes in some embodiments. According tothe embodiment, the first interposer 21 and the second interposer 22both have a rectangular shape when viewed from above, and may have alength L and a width W. According to the embodiment, for example, thelength L may be equal to or smaller than 32 mm, and the width W mayequal to or smaller than 26 mm, but is not limited thereto. Acontinuous, slender gap 200 is located between the first interposer 21and the second interposer 22. The body of the first interposer 21 isseparated from the body of the second interposer 22 by the gap 200.

According to various embodiments, the first interposer 21 and the secondinterposer 22 may be made of silicon, glass, or organic material. Othertypes of interposers can be used without departing from the scope of thedisclosure. The first interposer 21 and the second interposer 22 may bemanufactured in wafer or array form and may contain integrated active orpassive devices (not shown). The first interposer 21 and the secondinterposer 22 may further contain through silicon vias (TSVs) 210 and220.

The semiconductor package 1 further comprises a first chip or die 11 anda second chip or die 12 mounted onto the top surface 21 a of the firstinterposer 21 and the top surface 22 a of the second interposer 22 in aflip-chip manner. According to various embodiments, the first die 11 andthe second die 12 are coplanar. According to the embodiment, the firstdie 11 and the second die 12 are arranged in parallel along thereference x-axis. Although only two dies 11 and 12 are illustrated inthe figures, it is understood that more dies, for example, three or fourdies, may be mounted on the two interposers in various embodiments. Thefirst die 11 has a top surface 11 a and a bottom surface (or activesurface) 11 b that is opposite to the top surface 11 a. The second die12 has a top surface 12 a and a bottom surface (or active surface) 12 bthat is opposite to the top surface 12 a. On the active surfaces 11 band 12 b of the first die 11 and the second die 12, a plurality ofinput/output (I/O) pads (not shown) may be provided.

As can be best seen in FIG. 2 and FIG. 3, the first die 11 iselectrically connected to the first interposer 21 and the secondinterposer 22 through a plurality of connection elements 110 such assolder bumps or metal bumps formed on the bottom surface 11 b. Thesecond die 12 is electrically connected to the first interposer 21 andthe second interposer 22 through a plurality of connection elements 120such as solder bumps or metal bumps formed on the bottom surface 12 b.

According to the embodiment, the first die 11 and the second die 12 aresurrounded by a first molding compound 40. According to the embodiment,the connection elements 110, the connection elements 120, the firstinterposer 21, and the second interposer 22 are encapsulated by a secondmolding compound 50. According to the embodiment, the top surface 11 aof the first die 11 and the top surface 12 a of the second die 12 may beexposed from the first molding compound 40. According to the embodiment,the bottom surface 11 b of the first die 11 and the bottom surface 12 bof the second die 12 may be covered by the second molding compound 50.An interface 45, as shown by dashed line, between the first moldingcompound 40 and the second molding compound 50 may be flush with thebottom surface (active surface) 11 b of the first die 11 and the bottomsurface 12 b of the second die 12. The gap 200 is filled up with thesecond molding compound 50.

According to the embodiment, the first molding compound 40 and thesecond molding compound 50 may be subjected to curing processes. Thefirst molding compound 40 and the second molding compound 50 maycomprise a mixture of epoxy and silica fillers, but not limited thereto.According to the embodiment, the first molding compound 40 and thesecond molding compound 50 may comprise different compositions and maybe cured at different temperatures, but is not limited thereto.

According to the embodiment, on the bottom surface 21 b of the firstinterposer 21 and on the bottom surface 22 b of the second interposer22, a redistribution layer (RDL) structure 30 is formed. The RDLstructure 30 may comprise at least one metal layer 310 and at least onedielectric layer 320. The dielectric layer 320 may comprise organicmaterials such as polyimide (PI) or inorganic materials such as siliconnitride, silicon oxide or the like, but not limited thereto. The metallayer 310 may comprise aluminum, copper, tungsten, titanium, titaniumnitride, or the like. It is understood that in some embodiments the RDLstructure 30 may comprise multiple metal layers or traces.

According to the embodiment, circuits including TSVs 210 in the firstinterposers 21 and circuits including TSVs 220 in the second interposer22 may be interconnected through at least one metal trace (or bridgetrace) 310 a, which traverses the gap 200. The metal trace 310 a and themetal layer 310 of the RDL structure 30 may propagate signals among thefirst die 11 and the second die 12. Connectors 510 such as solder balls,ball grid arrays (BGAs), C4 bumps, metal bumps, or metal pillars may beformed on the lower surface of the RDL structure 30 to electricallyconnect to the metal layer 310 and the metal trace 310 a.

According to the embodiment, the semiconductor package 1 may be a2.5-dimensional (2.5D) multi-die package with two dies and two discreteinterposers 21, 22 arranged in a side-by-side manner. Each of the twodiscrete interposers 21, 22 has a surface area that is smaller than isconventionally required for such semiconductor package, according to theprior art. Therefore, the yields of fabricating such interposers can beimproved. Further, by using multiple coplanar interposers having smallersizes, the warpage of the semiconductor package is improved.

The two discrete interposers 21, 22 are not in direct physical contact.Through the RDL structure 30 formed on the bottom surfaces of the twodiscrete interposers, the two discrete interposers 21, 22 areelectrically interconnected to each other. It is another structuralfeature is that the semiconductor package 1 comprises two moldingcompounds 40 and 50. The two molding compounds 40 and 50 may be composedof different compositions. The gap 200 between the first interposer 21and the second interposer 22 is filled up with the second moldingcompound 50.

FIG. 4 to FIG. 10 are schematic, cross-sectional diagrams showing anexemplary method for fabricating the semiconductor package having thetwo interposers of FIG. 1, wherein like numeral numbers designate likeregions, layers, or elements. The semiconductor package having the twointerposers 21, 22 of FIG. 1 can be fabricated by using a wafer-levelpackaging method.

First, as shown in FIG. 4, a carrier 100 is provided. The carrier 100may be composed of a releasable substrate material with an adhesivelayer 101, but is not limited thereto. A plurality of semiconductor dies10 are mounted on the carrier 100 in a flip-chip manner. Each die 10comprises a plurality of connection elements 10 a on its active surface.The connection elements 10 a are attached to the carrier 100 by theadhesive layer 101.

As shown in FIG. 5, a first molding compound 40 is applied. The firstmolding compound 40 covers the attached dies 10 and the top surface ofthe adhesive layer 101. The first molding compound 40 may be subjectedto a curing process. The first molding compound 40 may comprise amixture of epoxy and silica fillers, but not limited thereto. The firstmolding compound 40 may be subjected to a grinding process or polishingprocess to thereby remove an upper portion of the first molding compound40. At this point, the top surfaces of the dies 10 are exposed and maybe flush with the top surface of the first molding compound 40.

As shown in FIG. 6, the carrier 100 including the adhesive layer 101 isremoved to thereby expose the active surfaces of the dies 10 and theconnection elements 10 a. Optionally, another carrier (not shown) may beattached to the exposed top surfaces of the dies 10 for providingtemporary support before removing the carrier 100. The debonding of thecarrier 100 may be performed by using a laser process or UV(ultraviolet) irradiation process, but is not limited thereto.

As shown in FIG. 7, a plurality of pre-fabricated first interposers 21and a plurality of pre-fabricated second interposers 22 are mounted ontothe connection elements 10 a. The first interposers 21 and the secondinterposers 22 may be manufactured in wafer or array form, and then cutfrom the wafer to form the discrete interposers. Each of the interposers21, 22 may contain integrated active or passive devices (not shown) andthrough silicon vias (TSVs). According to the embodiment, the circuitsin each of the pre-fabricated first interposers 21 may be different fromthe circuits in each of the pre-fabricated first interposers 22.

According to the embodiment, for example, the TSVs 210 of the firstinterposer 21 and the TSVs 220 of the second interposer 22 may bealigned with the connection elements 10 a. It is understood that metallayers or pad structures (not shown) may be fabricated in theinterposers. According to the embodiment, each TSV 210 or 220 has oneend that is electrically connected to each of the connection elements 10a, and the other end still buried in the body of the interposer at thispoint.

As shown in FIG. 8, a second molding compound 50 is applied. The secondmolding compound 50 covers the first interposer 21 and the secondinterposer 22. The second molding compound 50 may fill into the gap 200(FIG. 2) between the interposers 21, 22 and the dies 10, and surroundsthe connection elements 10 a. The second molding compound 50 may besubjected to a curing process. The second molding compound 50 maycomprise a mixture of epoxy and silica fillers, but is not limitedthereto. The second molding compound 50 may be subjected to a grindingprocess or polishing process to thereby remove an upper portion of thesecond molding compound 50 and a portion of each of the first interposer21 and the second interposer 22 to thereby expose the other ends of theTSVs 210 and 220.

As shown in FIG. 9, a redistribution layer (RDL) structure 30 is formed.The RDL structure 30 may comprise at least one metal layer 310 and atleast one dielectric layer 320. The dielectric layer 320 may compriseorganic materials such as polyimide (PI) or inorganic materials such assilicon nitride, silicon oxide or the like, but not limited thereto. Themetal layer 310 may comprise aluminum, copper, tungsten, titanium,titanium nitride, or the like. It is understood that in some embodimentsthe RDL structure 30 may comprise multiple metal layers or traces.

According to the embodiment, the circuits including TSVs 210 in eachfirst interposer 21 and the circuits including TSVs 220 in each secondinterposer 22 may be interconnected through at least one metal trace (orbridge trace) 310 a, which traverses the gap 200 (FIG. 2) between thefirst interposer 21 and the second interposer 22. A plurality ofopenings 320 a may be formed in the RDL structure 30 to expose solderpads in the metal layer 310.

As shown in FIG. 10, connectors 510 such as solder balls, ball gridarrays (BGAs), C4 bumps, metal bumps, or metal pillars may be formed inthe openings 320 a to electrically connect to the metal layer 310 andthe metal trace 310 a. The wafer level package is then diced andsingulated into individual semiconductor packages 1. For example, beforewafer dicing, the wafer level package may be first attached to a dicingtape (not shown), where the connectors 510 face toward, and may contact,the dicing tape.

Please refer to FIG. 11 to FIG. 13. FIG. 11 is a block diagramillustrating a topographic view of a semiconductor package having threeinterposers in accordance with another embodiment of the invention. FIG.12 is a schematic, cross-sectional diagram of the semiconductor packagehaving three interposers taken along line of FIG. 11. FIG. 13 is aschematic, cross-sectional diagram of the semiconductor package havingthree interposers taken along line IV-IV′ of FIG. 11.

As shown in FIG. 11 to FIG. 13, the semiconductor package 2 comprisesthree discrete interposers: a first interposer 21, a second interposer22, and a third interposer 23. The first interposer 21, the secondinterposer 22, and the third interposer 23 may have the same size andmay be arranged in a side-by-side manner. According to the embodiment,the first interposer 21, the second interposer 22, and the thirdinterposer 23 are arranged in parallel along the reference x-axis.

According to the embodiment, the first interposer 21, the secondinterposer 22, and the third interposer 23 have a rectangular shape whenviewed from the above, and may have a length L and a width W. Accordingto the embodiment, for example, the length L may be equal to or smallerthan 32 mm, and the width W may equal to or smaller than 26 mm, but isnot limited thereto.

A continuous, slender gap 200 a is located between the first interposer21 and the second interposer 22. A continuous, slender gap 200 b islocated between the second interposer 22 and the third interposer 23.The gaps 200 a and 200 b separate the first interposer 21, the secondinterposer 22, and the third interposer 23 from one another.

According to various embodiments, the first interposer 21, the secondinterposer 22, and the third interposer 23 may be made of silicon,glass, or organic material. Other types of interposers can be usedwithout departing from the scope of the disclosure. The first interposer21, the second interposer 22, and the third interposer 23 may bemanufactured in wafer or array form and may contain integrated active orpassive devices (not shown) and through silicon vias (TSVs) 210, 220,and 230.

A first die 11 and a second die 12 are mounted onto the first interposer21, the second interposer 22, and the third interposer 23 in a flip-chipmanner. According to various embodiments, the first die 11 and thesecond die 12 are coplanar. According to the embodiment, the first die11 and the second die 12 are arranged in parallel along the referencex-axis. Although only two dies 11 and 12 are illustrated in the figures,it is understood that more dies, for example, three or four dies may bemounted on the two interposers in various embodiments.

According to the embodiment, the first die 11 is mounted between thefirst interposer 21 and the second interposer 22 and traverses the gap200 a. According to the embodiment, the second die 12 is mounted betweenthe second interposer 22 and the third interposer 23 and traverses thegap 200 b. As can be best seen in FIG. 12 and FIG. 13, the first die 11is electrically connected to the first interposer 21 and the secondinterposer 22 through a plurality of connection elements 110 such assolder bumps or metal bumps. The second die 12 is electrically connectedto the second interposer 22 and the third interposer 23 through aplurality of connection elements 120 such as solder bumps or metalbumps.

According to the embodiment, the first die 11 and the second die 12 aresurrounded by a first molding compound 40. According to the embodiment,the connection elements 110, the connection elements 120, the firstinterposer 21, the second interposer 22, and the third interposer 23 areencapsulated by a second molding compound 50. The gaps 200 a and 200 bare filled up with the second molding compound 50. According to theembodiment, the first molding compound 40 and the second moldingcompound 50 may comprise different compositions and may be cured atdifferent temperatures, but is not limited thereto.

The semiconductor package 2 further comprises a redistribution layer(RDL) structure 30. The RDL structure 30 may comprise at least one metallayer 310 and at least one dielectric layer 320. The dielectric layer320 may comprise organic materials such as polyimide (PI) or inorganicmaterials such as silicon nitride, silicon oxide or the like, but notlimited thereto. The metal layer 310 may comprise aluminum, copper,tungsten, titanium, titanium nitride, or the like. It is understood thatin some embodiments the RDL structure 30 may comprise multiple metallayers or traces.

According to the embodiment, the circuits including TSVs 210 in thefirst interposer 21 and the circuits including TSVs 220 in the secondinterposer 22 may be interconnected through at least one metal trace (orbridge trace) 310 a, which traverses the gap 200 a. According to theembodiment, the circuits including TSVs 220 in the second interposer 22and the circuits including TSVs 230 in the third interposer 23 may beinterconnected through at least one metal trace (or bridge trace) 310 b,which traverses the gap 200 b. The metal trace 310 a, the metal trace310 b, and the metal layer 310 of the RDL structure 30 may propagatesignals among the first die 11 and the second die 12. Connectors 510such as solder balls, ball grid array (BGA) balls, C4 bumps, metalbumps, or metal pillars may be formed on the lower surface of the RDLstructure 30 to electrically connect to the metal layer 310 and themetal traces 310 a and 310 b.

Please refer to FIG. 14 to FIG. 16. FIG. 14 is a block diagramillustrating a topographic view of a semiconductor package having twointerposers in accordance with another embodiment of the invention. FIG.15 is a schematic, cross-sectional diagram of the semiconductor packagehaving two interposers taken along line V-V′ of FIG. 14. FIG. 16 is aschematic, cross-sectional diagram of the semiconductor package havingtwo interposers taken along line VI-VI′ of FIG. 14.

As shown in FIG. 14 to FIG. 16, the semiconductor package 3 comprisestwo discrete interposers: a first interposer 21 and a second interposer22. The first interposer 21 and the second interposer 22 may have thesame size and may be arranged in a side-by-side manner. According to theembodiment, the first interposer 21 and the second interposer 22 arearranged in parallel along the reference x-axis. According to theembodiment, the first interposer 21 and the second interposer 22 mayhave a rectangular shape when viewed from the above. A continuous,slender gap 200 a is located between the first interposer 21 and thesecond interposer 22. The gap 200 a separates the first interposer 21from the second interposer 22.

According to various embodiments, the first interposer 21 and the secondinterposer 22 may be made of silicon, glass, or organic material. Othertypes of interposers can be used without departing from the scope of thepresent subject matter. The first interposer 21 and the secondinterposer 22 may be manufactured in wafer or array form and may containintegrated active or passive devices (not shown) and through siliconvias (TSVs) 210, 220.

A first die 11 is mounted only onto the first interposer 21 in aflip-chip manner. A second die 12 is mounted only onto the secondinterposer 22 in a flip-chip manner. According to various embodiments,the first die 11 and the second die 12 are coplanar. According to theembodiment, the first die 11 and the second die 12 are arranged inparallel along the reference x-axis. Although only two dies 11 and 12are illustrated in the figures, it is understood that more dies, forexample, three or four dies may be mounted on the two interposers invarious embodiments.

According to the embodiment, the first die 11 and the second die 12 donot traverse or overlap the gap 200 a. As can be best seen in FIG. 15and FIG. 16, the first die 11 is electrically connected to the firstinterposer 21 through a plurality of connection elements 110 such assolder bumps or metal bumps. The second die 12 is electrically connectedto the second interposer 22 through a plurality of connection elements120 such as solder bumps or metal bumps.

According to the embodiment, the first die 11 and the second die 12 aresurrounded by a first molding compound 40. According to the embodiment,the connection elements 110, the connection elements 120, the firstinterposer 21, and the second interposer 22 are encapsulated by a secondmolding compound 50. The gap 200 a is filled up with the second moldingcompound 50. According to the embodiment, the first molding compound 40and the second molding compound 50 may comprise different compositionsand may be cured at different temperatures, but is not limited thereto.

The semiconductor package 3 further comprises a redistribution layer(RDL) structure 30. The RDL structure 30 may comprise at least one metallayer 310 and at least one dielectric layer 320. The dielectric layer320 may comprise organic materials such as polyimide (PI) or inorganicmaterials such as silicon nitride, silicon oxide or the like, but notlimited thereto. The metal layer 310 may comprise aluminum, copper,tungsten, titanium, titanium nitride, or the like. It is understood thatin some embodiments the RDL structure 30 may comprise multiple metallayers or traces.

According to the embodiment, the circuits including TSVs 210 in thefirst interposer 21 and the circuits including TSVs 220 in the secondinterposer 22 may be interconnected through at least one metal trace (orbridge trace) 310 a, which traverses the gap 200 a. The metal trace 310a and the metal layer 310 of the RDL structure 30 may propagate signalsamong the first die 11 and the second die 12. Connectors 510 such assolder balls, ball grid array (BGA) balls, C4 bumps, metal bumps, ormetal pillars may be formed on the lower surface of the RDL structure 30to electrically connect to the metal layer 310 and the metal trace 310a.

Please refer to FIG. 17 to FIG. 19. FIG. 17 is a block diagramillustrating a topographic view of a semiconductor package having fourinterposers in accordance with another embodiment of the invention. FIG.18 is a schematic, cross-sectional diagram of the semiconductor packagehaving four interposers taken along line VII-VII′ of FIG. 17. FIG. 19 isa schematic, cross-sectional diagram of the semiconductor package havingfour interposers taken along line VIII-VIII′ of FIG. 17.

As shown in FIG. 17 to FIG. 19, the semiconductor package 4 comprisesfour discrete interposers: a first interposer 21, a second interposer22, a third interposer 23, and a fourth interposer 24. The fourinterposers may have the same size and may be arranged in a side-by-sidemanner. According to the embodiment, the four interposers may berespectively arranged in four quadrants of a reference coordinate.According to the embodiment, the four interposers may have a rectangularshape when viewed from the above.

A continuous, slender gap 200 a extending along the reference y-axis islocated between the first interposer 21 and the second interposer 22 andbetween the third interposer 23 and the fourth interposer 24. The gap200 a separates the first interposer 21 from the second interposer 22and separates the third interposer 23 from the fourth interposer 24. Acontinuous, slender gap 200 b extending along the reference x-axis islocated between the first interposer 21 and the third interposer 23 andbetween the second interposer 22 and the fourth interposer 24. The gap200 a intersects the gap 200 b.

According to various embodiments, the four interposers may be made ofsilicon, glass, or organic material. Other types of interposers can beused without departing from the scope of the disclosure. The fourinterposers 21, 22, 23 and 24 may be manufactured in wafer or array formand may contain integrated active or passive devices (not shown) andthrough silicon vias (TSVs).

A first die 11 is mounted onto the first interposer 21 and the thirdinterposer 23 in a flip-chip manner. The first die 11 overlaps with thegap 200 b. A second die 12 is mounted onto the second interposer 22 andthe fourth interposer 24 in a flip-chip manner. The second die 12overlaps with the gap 200 b. According to the embodiment, the first die11 and the second die 12 do not overlap with the gap 200 a. According tothe embodiment, the first die 11 and the second die 12 are coplanar.According to the embodiment, the first die 11 and the second die 12 arearranged in parallel along the reference x-axis. Although only two dies11 and 12 are illustrated in the figures, it is understood that moredies, for example, three or four dies may be mounted on the twointerposers in various embodiments.

As can be best seen in FIG. 18 and FIG. 19, the first die 11 iselectrically connected to the first interposer 21 and the thirdinterposer 23 (FIG. 17) through a plurality of connection elements 110such as solder bumps or metal bumps. The second die 12 is electricallyconnected to the second interposer 22 and the fourth interposer 24through a plurality of connection elements 120 such as solder bumps ormetal bumps.

According to the embodiment, the first die 11 and the second die 12 aresurrounded by a first molding compound 40. According to the embodiment,the connection elements 110, the connection elements 120, the fourinterposers 21, 22, 23 and 24 are encapsulated by a second moldingcompound 50. The gap 200 a and the gap 200 b are filled up with thesecond molding compound 50. According to the embodiment, the firstmolding compound 40 and the second molding compound 50 may comprisedifferent compositions and may be cured at different temperatures, butis not limited thereto.

The semiconductor package 4 further comprises a redistribution layer(RDL) structure 30. The RDL structure 30 may comprise at least one metallayer 310 and at least one dielectric layer 320. The dielectric layer320 may comprise organic materials such as polyimide (PI) or inorganicmaterials such as silicon nitride, silicon oxide or the like, but notlimited thereto. The metal layer 310 may comprise aluminum, copper,tungsten, titanium, titanium nitride, or the like. It is understood thatin some embodiments the RDL structure 30 may comprise multiple metallayers or traces.

According to the embodiment, the circuits including TSVs 210 in thefirst interposer 21 and the circuits including TSVs 220 in the secondinterposer 22 may be interconnected through at least one metal trace (orbridge trace) 310 a, which traverses the gap 200 a. The metal trace 310a and the metal layer 310 of the RDL structure 30 may propagate signalsamong the first die 11 and the second die 12. Connectors 510 such assolder balls, ball grid array (BGA) balls, C4 bumps, metal bumps, ormetal pillars may be formed on the lower surface of the RDL structure 30to electrically connect to the metal layer 310 and the metal trace 310a.

Those skilled in the art will readily observe that numerousmodifications and alterations of the device and method may be made whileretaining the teachings of the invention. Accordingly, the abovedisclosure should be construed as limited only by the metes and boundsof the appended claims.

What is claimed is:
 1. A semiconductor package, comprising: a firstinterposer and a second interposer coplanar with the first interposer; agap between the first interposer and the second interposer; a first diemounted on the first interposer and the second interposer and comprisingfirst connection elements connecting the first die to at least one ofthe first interposer and the second interposer; and a redistributionlayer (RDL) structure disposed on bottom surfaces of the firstinterposer and the second interposer electrically connecting the firstinterposer with the second interposer.
 2. The semiconductor packageaccording to claim 1, wherein the RDL structure comprises at least onebridge trace traversing the gap to electrically connect the firstinterposer with the second interposer.
 3. The semiconductor packageaccording to claim 2, wherein the RDL structure comprises at least onemetal layer and at least one dielectric layer, wherein the metal layercomprises the at least one bridge trace.
 4. The semiconductor packageaccording to claim 3, further comprising connectors on a lower surfaceof the RDL structure to electrically connect to the metal layer.
 5. Thesemiconductor package according to claim 4, wherein the connectorscomprise ball grid array, C4 bumps, metal bumps, or metal pillars. 6.The semiconductor package according to claim 1, wherein the firstconnection elements and the second connection elements comprise solderbumps or metal bumps.
 7. The semiconductor package according to claim 1,further comprising a first molding compound surrounding the first dieand the second die.
 8. The semiconductor package according to claim 7,further comprising a second molding compound encapsulating the firstconnection elements, the second connection elements, the firstinterposer, and the second interposer.
 9. The semiconductor packageaccording to claim 8, wherein the first molding compound and the secondmolding compound have different compositions.
 10. The semiconductorpackage according to claim 8, wherein the gap is filled with the secondmolding compound.
 11. The semiconductor package according to claim 8,wherein an interface between the first molding compound and the secondcompound is flush with active surfaces of the first die and the seconddie.
 12. The semiconductor package of claim 1, further comprising asecond die mounted on the first interposer and the second interposer andcomprising second connection elements electrically connecting the seconddie to at least one of the first interposer and the second interposer.13. The semiconductor package of claim 1, further comprising a seconddie, and a third interposer coplanar with the first interposer and thesecond interposer; and a gap between the second interposer and the thirdinterposer; the second die mounted on the second interposer and thethird interposer and comprising connection elements electricallyconnecting the second die to at least one of the first interposer andthe second interposer; wherein the redistribution layer (RDL) structuredisposed on bottom surfaces of the first interposer and the secondinterposer is further disposed on a bottom surface of the thirdinterposer and electrically connects the second interposer with thethird interposer.
 14. The semiconductor package according to claim 13,wherein the RDL structure comprises at least one bridge trace traversingthe gap between the first interposer and the second interposer toelectrically connect the first interposer with the second interposer andat least another bridge trace traversing the gap between the firstinterposer and the second interposer to electrically connect the secondinterposer with the third interposer.
 15. The semiconductor package ofclaim 1, further comprising a second die, and a third interposer and afourth interposer coplanar with the first interposer and the secondinterposer; and gaps between each of the first, second, third and fourthinterposers; the second die mounted on the third interposer and thefourth interposer and comprising second connection elements electricallyconnecting the second die to at least one of the third interposer andthe fourth interposer.
 16. The semiconductor package according to claim15, wherein the RDL structure comprises at least one bridge tracetraversing the gap between the first interposer and the secondinterposer to electrically connect the first interposer with the secondinterposer.
 17. A semiconductor package, comprising: a first interposerand a second interposer coplanar with the first interposer; a gapbetween the first interposer and the second interposer; a first diemounted on the first interposer and comprising connection elementsconnecting the first die to the first interposer; a second die mountedon the first interposer and comprising second connection elementsconnecting the second die to the second interposer; and a redistributionlayer (RDL) structure disposed on bottom surfaces of the firstinterposer and the second interposer electrically connecting the firstinterposer with the second interposer.
 18. The semiconductor packageaccording to claim 17, wherein the RDL structure comprises at least onebridge trace traversing the gap between the first interposer and thesecond interposer to electrically connect the first interposer with thesecond interposer.